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Fuses
NH 2 50A 690V GG
IEC 60269-1 and -2; Lead free contact blades; VDE 0636 Part 201; 0% cadmium; Dimensions according to DIN 43 620 parts 1 to 4; Non-isolated gripping lugs; Double indicator
NH 000 25A 690V GG SGL
VDE 0636 Part 201; 0% cadmium; Dimensions according to DIN 43 620 Parts 1 to 4; Isolated metal gripping lugs (SGL); Double indicator; IEC 60269-1 and -2; Lead free contact blades
NH 0 50A 690V GG SGL
0% cadmium; Dimensions according to DIN 43 620 Parts 1 to 4; IEC 60269-1 and -2; Lead free contact blades; Isolated metal gripping lugs (SGL); VDE 0636 Part 201; Double indicator
NH 2 35A 690V GG SGL
Double indicator; Lead free contact blades; IEC 60269-1 and -2; VDE 0636 Part 201; Dimensions according to DIN 43 620 Parts 1 to 4; Isolated metal gripping lugs (SGL); 0% cadmium
PWR DIS BLK CU MINI 85A 3P 1
UL Listed to subject 1953, File E352417 unless noted otherwise; CSA Certified Class 6228 01
PWR DIS BLK CU MINI 175A AD 4
UL Listed to subject 1953, File E352417 unless noted otherwise; CSA Certified Class 6228 01
PWR DIS BLK CU MINI 175A 1P 4
CSA Certified Class 6228 01; UL Listed to subject 1953, File E352417 unless noted otherwise
69 URD 31 D11 A 0400
Multiple body sizes and terminals or blades combination; Current limiting; CCC GB 1539.4; Superior cycling capability; Very low I²t for improved semiconductor protection; UL/CSA Recognized E76491; IEC 60269.4 Compliance; aR Class according to IEC 60269-4 and VDE 636-23; Ultra fast acting
69 URD 31 EF 0700
Ultra fast acting; Multiple body sizes and terminals or blades combination; Superior cycling capability; IEC 60269.4 Compliance; Very low I²t for improved semiconductor protection; UL/CSA Recognized E76491; aR Class according to IEC 60269-4 and VDE 636-23; Current limiting; CCC GB 1539.4
69 URD 32 TT F 0550
Superior cycling capability; aR Class according to IEC 60269-4 and VDE 636-23; IEC 60269-4 Compliance; UL/CSA Recognized E76491; CCC GB 13539.4; Current limiting; Multiple body sizes and terminals or blades combination; Ultra fast acting; Very low I²t for improved semiconductor protection